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生物质基绿色荧光N掺杂碳点的制备及分析

Preparation and Analysis of Biomass-based N-doped Carbon Dots with Green Fluorescence

  • 摘要: 以落叶松树皮为原料,40%乙醇水溶液为溶剂,通过超声波破碎法得到提取液后加入乙二胺,采用水热合成法制备了N掺杂碳点(NCDs)。通过FT-IR、XPS、TEM、XRD和UV对NCDs的结构进行表征分析,结果表明:制备的NCDs主要含有C、N、O这3种元素,其表面存在苯环、氨基、羟基和羰基等基团;NCDs为球形粒子,平均粒径4.8 nm,其存在石墨化碳核的(002)晶面,在≤300 nm和300~600 nm区域存在由π-π*和n-π*电子跃迁引起的紫外吸收,证实了NCDs主要由石墨化碳核及其表面功能基团组成。荧光性能分析结果表明:NCDs具有激发依赖性和良好的抗光漂白稳定性,随着温度的升高其荧光强度降低。通过不同金属离子对NCDs荧光强度影响分析,可知Fe3+对NCDs具有选择性荧光静态猝灭作用,其检测极限(LOD)值为9.07 μmol/L。通过复合法制备了黄绿色荧光粉NCDs/SiO2,将其作为颜色转换层,使用蓝光发射(450 nm)半导体芯片封装,可得到国际照明委员会(CIE)1931色度图坐标为(0.318 2,0.303 0),相关色温(CCT)为6 381 K,显色指数(CRI)为84.1的白色发光二极管(WLED)。

     

    Abstract: The extract solution was obtained by ultrasonic crushing with using larch bark as raw material and 40% ethanol aqueous solution as solvent, and ethylenediamine was then added to prepare N-doped carbon dots(NCDs) by hydrothermal synthesis method. FT-IR, XPS, TEM, XRD and UV were applied to characterize and analyze the structure of NCDs. The results showed that the prepared NCDs mainly contained three elements of C, N and O, and the surface bear benzene ring, amino, hydroxyl and carbonyl groups. The NCDs were spherical particles with an average particle size of 4.8 nm, and had (002) lattice plane of graphitized carbon core. The existences of ultraviolet absorption caused by π-π* and n-π* electron transitions was in the region of ≤300 nm and 300-600 nm. These results confirmed that NCDs were mainly composed of graphitized carbon core and surface functional groups. In addition, fluorescence analysis showed that NCDs had excitation dependence and stability against photobleaching, and the fluorescence intensity decreased with increasing temperature. The analysis of the effect of different metal ions on the fluorescence intensity of NCDs showed that Fe3+ had selective fluorescence static quenching effect on NCDs with the limit of detection(LOD) of 9.07 μmol/L. Additionally, the yellow-green phosphor NCDs/SiO2 was also prepared by the composite method and was used as the color conversion layer. The white light-emitting diodes(WLEDs) with CIE color coordinates of (0.318 2, 0.303 0), correlation color temperature of 6 381 K and color rendering index of 84.1, were obtained by using blue emission(450 nm) semiconductor chip encapsulation.

     

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